| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BF1005 | Silicon N-channel MOSFET tetrode | Infineon-formely-Siemens | - | 4 | - | - | 51 K |
| BF1005S | Silicon N-channel MOSFET tetrode | Infineon-formely-Siemens | - | 4 | - | - | 52 K |
| F1005 | Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 4 | -65°C | 150°C | 37 K |
| MURF1005CT | 10A, 50V ultra fast recovery rectifier | distributor | - | - | - | - | 121 K |
| PTF10052 | 35 watts, 1.0 GHz GOLDMOS field effect transistor | Ericsson-Microelectronics | 20235 | 3 | - | - | 498 K |
| PTF10053 | 12 watts, 2.0 GHz GOLDMOS field effect transistor | Ericsson-Microelectronics | 20244 | 3 | - | - | 81 K |
| UF1005 | 1AMP ultra fast switching rectifier | distributor | - | 2 | -65°C | 150°C | 759 K |
| UF1005 | 600V; 1.0A ultra-fast rectifier; high current capability and high speed switching | distributor | - | 2 | -65°C | 150°C | 62 K |
| UF1005 | 600V, 1.0A ultra fast rectifier | distributor | - | 2 | -55°C | 150°C | 35 K |
| UF1005M | 500V, 1.0A ultra fast rectifier | distributor | - | 2 | -55°C | 125°C | 35 K |
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