| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 74F1071MSA | 18-Bit Undershoot/Overshoot Clamp and ESD Protection Device | Fairchild-Semiconductor | SSOP | 20 | - | - | 91 K |
| 74F1071MSAX | 18-Bit Undershoot/Overshoot Clamp and ESD Protection Device | Fairchild-Semiconductor | SSOP | 20 | - | - | 91 K |
| 74F1071MTC | 18-Bit Undershoot/Overshoot Clamp and ESD Protection Device | Fairchild-Semiconductor | TSSOP | 20 | - | - | 91 K |
| 74F1071MTCX | 18-Bit Undershoot/Overshoot Clamp and ESD Protection Device | Fairchild-Semiconductor | TSSOP | 20 | - | - | 91 K |
| 74F1071SC | 18-Bit Undershoot/Overshoot Clamp and ESD Protection Device | Fairchild-Semiconductor | SOIC | 20 | - | - | 91 K |
| 74F1071SCX | 18-Bit Undershoot/Overshoot Clamp and ESD Protection Device | Fairchild-Semiconductor | SOIC | 20 | - | - | 91 K |
| F1070 | 200 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 4 | -65°C | 150°C | 38 K |
| MF1070S-1 | Filter for the RF circuit | Mitsubishi-Electric-Corporation-Semiconductor-Group | SMD | - | -20°C | 70°C | 147 K |
| MF1073S-1 | Filter for the RF circuit | Mitsubishi-Electric-Corporation-Semiconductor-Group | SMD | - | -20°C | 70°C | 281 K |
| PMBF107 | N-channel enhancement mode vertical D-MOS transistor | Philips-Semiconductors | SOT23 | - | - | - | 70 K |
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