| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IRF130 | 12A and 14A, 80V and 100V, 0.16 and 0.23 Ohm, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 56 K |
| IRF130 | 100V Vdss N-Channel FET (field effect transistor) | Semelab-Plc- | TO3 | - | - | - | 22 K |
| IRF130SMD | 100V Vdss N-Channel FET (field effect transistor) | Semelab-Plc- | SMD1 | - | - | - | 22 K |
| IRFF130 | 8.0A, 100V, 0.180 Ohm, N-Channel Power MOSFET | Intersil-Corporation | - | - | - | - | 325 K |
| KGF1305T | Power FET (ceramic package type) | distributor | PHTP | 3 | - | - | 66 K |
| MGF1302 | Low noise GaAs fet | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | - | - | 211 K |
| MGF1303B | Low noise GaAs fet | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | - | - | 175 K |
| MJF13007 | NPN silicon power transistor | Motorola | - | 3 | -65°C | 150°C | 337 K |
| MJF13007 | SWITCHMODE™ | ON-Semiconductor | - | 3 | - | - | 337 K |
| UF130 | Ultra Fast Rectifier (less than 100ns) | Microsemi-Corporation | - | - | - | - | 89 K |
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