Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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ARF1502 | 65V, 1500W, RF power MOSFET | Advanced-Power-Technology-APT | - | 3 | -55°C | 200°C | 114 K |
DF150 | 50V, 1.5A glass passivated bridge rectifier | distributor | DIL | 4 | -65°C | 150°C | 45 K |
DF150 | 50V, 1.5A glass passivated bridge rectifier | distributor | DIL | 4 | -65°C | 150°C | 45 K |
DF150S | 50V, 1.5A surface mount glass passivated bridge rectifier | distributor | DIL | 4 | -65°C | 150°C | 52 K |
IRF150 | Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole(TO-204AA/AE). BVDSS = 100V, RDS(on) = 0.055 Ohm, ID = 38A | International-Rectifier | - | 3 | -55°C | 150°C | 150 K |
MRF150 | 150 W, N-channel MOS linear RF power FET | M-A-COM---manufacturer-of-RF | - | 4 | - | - | 183 K |
UF150 | Ultrafast switching rectifier. Peak reverse voltage 50 V. Average forward current 1.5 A. | distributor | - | 2 | -55°C | 150°C | 54 K |
UF1506MS | 800V, 1.5A ultra fast rectifier | distributor | - | 2 | -55°C | 125°C | 35 K |
UF1507MS | 1000V, 1.5A ultra fast rectifier | distributor | - | 2 | -55°C | 125°C | 35 K |
UF150G | Glass passivated junction ultrafast switching rectifier. Peak reverse voltage 50 V. Average forward current 1.5 A. | distributor | - | 2 | -55°C | 150°C | 56 K |
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