| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| DSF20060SF55 | 5500V fast recovery diode | distributor | - | - | - | - | 47 K |
| DSF20060SF56 | 5600V fast recovery diode | distributor | - | - | - | - | 47 K |
| DSF20060SF58 | 5800V fast recovery diode | distributor | - | - | - | - | 47 K |
| DSF20060SF60 | 6000V fast recovery diode | distributor | - | - | - | - | 47 K |
| F2001 | 2.5 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 2 | -65°C | 150°C | 37 K |
| F2002 | 5 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 2 | -65°C | 150°C | 37 K |
| F2003 | 5 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 4 | -65°C | 150°C | 37 K |
| F2004 | 8 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 4 | -65°C | 150°C | 37 K |
| MX29F200BTA-12 | Access time: 120ns; 2M-bit (256K x 8/128K x 16) CMOS flash memory | distributor | TSOP | 48 | -40°C | 85°C | 720 K |
| MX29F200BTA-90 | Access time: 90ns; 2M-bit (256K x 8/128K x 16) CMOS flash memory | distributor | TSOP | 48 | -40°C | 85°C | 720 K |
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