| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| F2021 | 7.5 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 2 | -65°C | 150°C | 37 K |
| SF202 | Super fast rectifier. Max repetitive peak reverse voltage 100 V. Max average forward rectified current 2.0 A. | distributor | - | 2 | -65°C | 125°C | 158 K |
| SF202 | 100 V, 2 A, Super fast recovery rectifier | distributor | DO | 2 | -55°C | 150°C | 177 K |
| SST32HF202-70-4E-L3K | Milti-purpose flash (MPF) + SRAM combomemory | Silicon-Storage-Technology-Inc- | LFBGA | 48 | -20°C | 85°C | 325 K |
| SST32HF202-90-4C-L3K | Milti-purpose flash (MPF) + SRAM combomemory | Silicon-Storage-Technology-Inc- | LFBGA | 48 | 0°C | 70°C | 325 K |
| SST32HF202-90-4E-L3K | Milti-purpose flash (MPF) + SRAM combomemory | Silicon-Storage-Technology-Inc- | LFBGA | 48 | -20°C | 85°C | 325 K |
| UF202 | Ultrafast switching rectifier. Peak reverse voltage 200 V. Average forward current 2.0 A. | distributor | - | 2 | -55°C | 150°C | 66 K |
| UF202 | 200 V, 2 A, ultrafast switching rectifier | distributor | - | 2 | -55°C | 150°C | 153 K |
| UF202G | Glass passivated junction ultrafast switching rectifier. Peak reverse voltage 200 V. Average forward current 2.0 A. | distributor | - | 2 | -55°C | 150°C | 67 K |
| UF202G | 200 V, 2 A, glass passivated junction ultrafast switching rectifier | distributor | - | 2 | -55°C | 150°C | 155 K |
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