| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BF256A | Transistor polarity N Channel Gfs min 4.5 mA/V Current Idss max 7 mA Current Idss min 3 mA Current Ig 10 mA Application code HFA Power Ptot 300 mW Voltage Vgs off max 7.5 V | Fairchild-Semiconductor | - | - | - | - | 120 K |
| BF256A | Transistor polarity N Channel Gfs min 4.5 mA/V Current Idss max 7 mA Current Idss min 3 mA Current Ig 10 mA Application code HFA Power Ptot 300 mW Voltage Vgs off max 7.5 V | Fairchild-Semiconductor | - | - | - | - | 120 K |
| IC61SF25632D-6.5B | 6.5ns; 2.5-3.3V; 256K x 32; 8Mb SYNCBURST flow through static RAM | distributor | BGA | 119 | 0°C | 70°C | 479 K |
| IC61SF25632D-6.5TQ | 6.5ns; 2.5-3.3V; 256K x 32; 8Mb SYNCBURST flow through static RAM | distributor | LQFP | 100 | 0°C | 70°C | 479 K |
| IC61SF25632T-6.5TQ | 6.5ns; 2.5-3.3V; 256K x 32; 8Mb SYNCBURST flow through static RAM | distributor | LQFP | 100 | 0°C | 70°C | 479 K |
| LF256D | Wide bandwidth single J-TET operational amplifier | SGS-Thomson-Microelectronics | SO | 8 | -40°C | 105°C | 250 K |
| LF256N | Wide bandwidth single J-TET operational amplifier | SGS-Thomson-Microelectronics | DIP | 8 | -40°C | 105°C | 250 K |
| M28F256-12B1 | Memory configuration 32Kx8 Memory type Flash Memory size 256 K-bit 256K (32K8) FLASH memory - 120ns Access | SGS-Thomson-Microelectronics | DIL | 32 | - | - | 715 K |
| M28F256-12C1 | Memory configuration 32Kx8 Memory type Flash Memory size 256 K-bit 256K (32K8) FLASH memory - 120ns Access (PLCC) | SGS-Thomson-Microelectronics | PLCC | 32 | - | - | 715 K |
| MBRF2560CT | 25A, 60V ultra fast recovery rectifier | distributor | - | - | - | - | 400 K |
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