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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
IC61SF51218D-6.5TQ6.5ns; 2.5-3.3V; 512K x 18; 8Mb SYNCBURST flow through static RAMdistributorLQFP1000°C70°C479 K
IC61SF51218D-7.5B7.5ns; 2.5-3.3V; 512K x 18; 8Mb SYNCBURST flow through static RAMdistributorPBGA1190°C70°C479 K
IC61SF51218D-7.5TQ7.5ns; 2.5-3.3V; 512K x 18; 8Mb SYNCBURST flow through static RAMdistributorTQFP1000°C70°C479 K
IC61SF51218D-8.5TQ8.5ns; 2.5-3.3V; 512K x 18; 8Mb SYNCBURST flow through static RAMdistributorTQFP1000°C70°C479 K
IC61SF51218T-7.5TQ7.5ns; 2.5-3.3V; 512K x 18; 8Mb SYNCBURST flow through static RAMdistributorTQFP1000°C70°C479 K
IC61SF51218T-8.5TQ8.5ns; 2.5-3.3V; 512K x 18; 8Mb SYNCBURST flow through static RAMdistributorTQFP1000°C70°C479 K
IRF512N-channel power MOSFET, 100V, 4.9AHarris-Semiconductor-3-55°C175°C68 K
M28F512-10C1Memory configuration 64Kx8 Memory type Flash Memory size 512 K-bit 512K (64K8) FLASH memory - 100ns Access (PLCC)SGS-Thomson-MicroelectronicsPLCC32--523 K
M28F512-12B1Memory configuration 64Kx8 Memory type Flash Memory size 512 K-bit 512K (64K8) FLASH memory - 120ns AccessSGS-Thomson-MicroelectronicsDIL32--523 K
M28F512-12C1Memory configuration 64Kx8 Memory type Flash Memory size 512 K-bit 512K (64K8) FLASH memory - 120ns Access (PLCC)SGS-Thomson-MicroelectronicsPLCC32--523 K
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