Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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E28F640J3A-120 | StrataFlash memory, x8/x16 (64 Mbit), Vcc=3V, 120ns | Intel-Corporation | TSOP | 56 | -25°C | 85°C | 380 K |
K4F640811B-TC-45 | 8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 45ns | Samsung-Electronic | TSOP II | 32 | 0°C | 70°C | 367 K |
K4F640811B-TC-50 | 8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 50ns | Samsung-Electronic | TSOP II | 32 | 0°C | 70°C | 367 K |
MT28F640J3FS-11 | 32Mb Q-flash memory | distributor | FBGA | 64 | 0°C | 70°C | 548 K |
MT28F640J3FS-11ET | 32Mb Q-flash memory | distributor | FBGA | 64 | 0°C | 70°C | 548 K |
NX25F640C-3T | 3 V, 64M-bit flash memory with 4-pin SPI interface | distributor | TSOP | 32 | 0°C | 70°C | 353 K |
NX25F640C-3T-R | 3 V, 64M-bit flash memory with 4-pin SPI interface | distributor | TSOP | 32 | 0°C | 70°C | 353 K |
NX26F640C-3T | 3 V, 64M-bit flash memory with 2-pin NXS2 interface | distributor | TSOP | 32 | 0°C | 70°C | 366 K |
NX26F640C-3T-R | 3 V, 64M-bit flash memory with 2-pin NXS2 interface | distributor | TSOP | 32 | 0°C | 70°C | 366 K |
RC28F640J3A-120 | StrataFlash memory, x8/x16 (64 Mbit), Vcc=3V, 120ns | Intel-Corporation | BGA | 64 | -25°C | 85°C | 380 K |
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