| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IRF840 | N-channel HEXFET, 500V, 8A | Motorola | - | 3 | -55°C | 150°C | 146 K |
| IRF840 | 500 V, Power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 60 K |
| IRF840 | N-channel HEXFET, 500V, 8A | Samsung-Electronic | - | 3 | -55°C | 150°C | 272 K |
| IRF840 | N-channel HEXFET, 500V, 8A | SGS-Thomson-Microelectronics | - | 3 | -65°C | 150°C | 334 K |
| IRF840B | 500V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 911 K |
| IRF840F1 | N-channel HEXFET, 500V, 4.5A | SGS-Thomson-Microelectronics | ISOWATT220 | 3 | -65°C | 150°C | 334 K |
| IRF840LCL | HEXFET power MOSFET. VDS = 500V, RDS(on) = 0.85 Ohm , ID = 8.0A | International-Rectifier | - | 3 | -55°C | 150°C | 173 K |
| IRF840LCS | HEXFET power MOSFET. VDS = 500V, RDS(on) = 0.85 Ohm , ID = 8.0A | International-Rectifier | DDPak | 3 | -55°C | 150°C | 173 K |
| IRF840S | HEXFET power MOSFET. VDS = 500V, RDS(on) = 0.85 Ohm , ID = 8.0A | International-Rectifier | - | 3 | -55°C | 150°C | 172 K |
| SRF840 | Schottky barrier rectifier. Max repetitive peak reverse voltage 40 V. Max average forward rectified current 8.0 A. | distributor | - | 2 | -65°C | 125°C | 150 K |
| [1] 2 [3] |
|---|
