| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IHB100S4803 | 100 Watt single output half brick DC/DC converter. Input voltage 48(33-75)VDC, rated output voltage 3.3VDC, rated max. output current 30A. | distributor | - | 8 | -40°C | 100°C | 241 K |
| IHB100S4805 | 100 Watt single output half brick DC/DC converter. Input voltage 48(33-75)VDC, rated output voltage 5.1VDC, rated max. output current 20A. | distributor | - | 8 | -40°C | 100°C | 241 K |
| PHB100N03LT | 25 V, N-channel enhancement mode field-effect transistor | Philips-Semiconductors | SOT | 3 | -55°C | 175°C | 331 K |
| PHB10N40 | PowerMOS transistor. | Philips-Semiconductors | SOT404 | 3 | -55°C | 150°C | 69 K |
| PHB10N40E | 400 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 90 K |
| VHB10-12F | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 4 | -65°C | 200°C | 17 K |
| VHB10-12S | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 4 | -65°C | 200°C | 16 K |
| VHB10-28F | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 4 | -65°C | 200°C | 17 K |
| VHB10-28S | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 4 | -65°C | 200°C | 17 K |
| VHB100-12 | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 6 | -65°C | 200°C | 17 K |
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