| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| TIP35A | NPN, silicon high-power transistor. Designed for use in general-purpose switching and power amplifier applications. Vceo = 60Vdc, Vcb = 60Vdc, Veb = 5Vdc, Ic = 25Adc, PD = 125W. | distributor | - | 3 | -65°C | 150°C | 47 K |
| TIP35B | NPN, silicon high-power transistor. Designed for use in general-purpose switching and power amplifier applications. Vceo = 80Vdc, Vcb = 80Vdc, Veb = 5Vdc, Ic = 25Adc, PD = 125W. | distributor | - | 3 | -65°C | 150°C | 47 K |
| TIP35C | NPN, silicon high-power transistor. Designed for use in general-purpose switching and power amplifier applications. Vceo = 100Vdc, Vcb = 100Vdc, Veb = 5Vdc, Ic = 25Adc, PD = 125W. | distributor | - | 3 | -65°C | 150°C | 47 K |
| TIP35C | NPN planar silicon transistor. Audio power amplifier. DC to DC converter. Collector-base voltage 100V. Collector-emitter voltage 100V. Emitter-base voltage 6V | Wing-Shing-Electronic-Co----manufacturer-of-power-semiconductors | - | 3 | - | - | 55 K |
| TIP35D | 120V 25A complementary silicon high-power transistor | distributor | - | 3 | -65°C | 150°C | 164 K |
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