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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
TIP35ANPN, silicon high-power transistor. Designed for use in general-purpose switching and power amplifier applications. Vceo = 60Vdc, Vcb = 60Vdc, Veb = 5Vdc, Ic = 25Adc, PD = 125W.distributor-3-65°C150°C47 K
TIP35BNPN, silicon high-power transistor. Designed for use in general-purpose switching and power amplifier applications. Vceo = 80Vdc, Vcb = 80Vdc, Veb = 5Vdc, Ic = 25Adc, PD = 125W.distributor-3-65°C150°C47 K
TIP35CNPN, silicon high-power transistor. Designed for use in general-purpose switching and power amplifier applications. Vceo = 100Vdc, Vcb = 100Vdc, Veb = 5Vdc, Ic = 25Adc, PD = 125W.distributor-3-65°C150°C47 K
TIP35CNPN planar silicon transistor. Audio power amplifier. DC to DC converter. Collector-base voltage 100V. Collector-emitter voltage 100V. Emitter-base voltage 6VWing-Shing-Electronic-Co----manufacturer-of-power-semiconductors-3--55 K
TIP35D120V 25A complementary silicon high-power transistordistributor-3-65°C150°C164 K
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