Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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IRF720 | N-channel HEXFET, 400V, 3.3A | International-Rectifier | - | 3 | -55°C | 150°C | 554 K |
IRF720 | N-channel MOSFET, 400V, 3.3A | Samsung-Electronic | - | 3 | -55°C | 150°C | 273 K |
IRF721 | N-channel HEXFET, 350V, 3.3A | International-Rectifier | - | 3 | -55°C | 150°C | 554 K |
IRF722 | N-channel HEXFET, 400V, 2.8A | International-Rectifier | - | 3 | -55°C | 150°C | 554 K |
IRF723 | N-channel HEXFET, 350V, 2.8A | International-Rectifier | - | 3 | -55°C | 150°C | 554 K |
IRF723 | N-channel HEXFET, 350V, 2.8A | International-Rectifier | - | 3 | -55°C | 150°C | 554 K |
IRF821 | N-channel MOSFET, 450V, 2.5A | SGS-Thomson-Microelectronics | - | 3 | -55°C | 150°C | 341 K |
IRF821FI | N-channel MOSFET, 450V, 2.0A | SGS-Thomson-Microelectronics | ISOWATT220 | 3 | -55°C | 150°C | 341 K |
IRF823 | N-channel MOSFET, 450V, 2.2A | SGS-Thomson-Microelectronics | - | 3 | -55°C | 150°C | 341 K |
IRF823FI | N-channel MOSFET, 450V, 1.5A | SGS-Thomson-Microelectronics | ISOWATT220 | 3 | -55°C | 150°C | 341 K |
IRF823FI | N-channel MOSFET, 450V, 1.5A | SGS-Thomson-Microelectronics | ISOWATT220 | 3 | -55°C | 150°C | 341 K |
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