Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
---|
IRF7809AV | HEXFET power MOSFET. VDS = 30V, RDS(on) = 7.0mOhm | International-Rectifier | SO | 8 | -55°C | 150°C | 114 K |
IRF7811AV | HEXFET power MOSFET. VDS = 30V, RDS(on) = 11mOhm | International-Rectifier | SO | 8 | -55°C | 150°C | 86 K |
IRF7811W | HEXFET power MOSFET for DC-DC converter. VDS = 30V, RDS(on) = 9.0mOhm | International-Rectifier | SO | 8 | -55°C | 150°C | 146 K |
IRF7822 | HEXFET power MOSFET for DC-DC converter. VDS = 30V, RDS(on) = 5.0mOhm | International-Rectifier | SO | 8 | -55°C | 150°C | 71 K |
IRF7901D1 | Dual FETKY co-packaged dual MOSFET plus schottky diode . VDS = 30V, RDS(on) = 38mOhm (Q1). VDS = 30V, RDS(on) = 32mOhm (Q2 and schottky). | International-Rectifier | SO | 8 | -55°C | 150°C | 256 K |
IRF820 | HEXFET power MOSFET. VDS = 500V, RDS(on) = 3.0Ohm , ID = 2.5A | International-Rectifier | - | 3 | -55°C | 150°C | 169 K |
IRF820A | HEXFET power MOSFET. VDS = 500V, RDS(on) = 3.0Ohm , ID = 2.5A | International-Rectifier | - | 3 | -55°C | 150°C | 100 K |
IRF820AL | HEXFET power MOSFET. VDS = 500V, RDS(on) = 3.0Ohm , ID = 2.5A | International-Rectifier | - | 3 | -55°C | 150°C | 133 K |
IRF820AS | HEXFET power MOSFET. VDS = 500V, RDS(on) = 3.0Ohm , ID = 2.5A | International-Rectifier | DDPak | 3 | -55°C | 150°C | 133 K |
IRF820S | HEXFET power MOSFET. VDS = 500V, RDS(on) = 3.0Ohm , ID = 2.5A | International-Rectifier | - | 3 | -55°C | 150°C | 172 K |
<< [48] [49] [50] [51] [52] 53 [54] [55] [56] [57] [58] >> |
---|