Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
---|
IRFB9N60A | HEXFET power MOSFET. VDSS = 600V, RDS(on) = 0.75 Ohm, ID = 9.2A | International-Rectifier | - | 3 | -55°C | 150°C | 135 K |
IRFB9N65A | HEXFET power MOSFET. VDSS = 650V, RDS(on) = 0.93 Ohm, ID = 8.5A | International-Rectifier | - | 3 | -55°C | 150°C | 102 K |
IRFBA1404P | HEXFET power MOSFET. VDSS = 40V, RDS(on) = 3.7mOhm, ID = 206A | International-Rectifier | - | 3 | -55°C | 150°C | 115 K |
IRFBA1405P | HEXFET power MOSFET. VDSS = 55V, RDS(on) = 5.0mOhm, ID = 174A | International-Rectifier | - | 3 | -40°C | 175°C | 238 K |
IRFBA22N50A | HEXFET power MOSFET. VDSS = 500V, RDS(on) = 0.23 Ohm, ID = 24A | International-Rectifier | - | 3 | -40°C | 175°C | 106 K |
IRFBA90N20D | HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.023 Ohm, ID = 98A | International-Rectifier | - | 3 | -55°C | 175°C | 98 K |
IRFBC20 | HEXFET power MOSFET. VDSS = 600V, RDS(on) = 4.4 Ohm, ID = 2.2A | International-Rectifier | - | 3 | -55°C | 150°C | 171 K |
IRFBC20L | HEXFET power MOSFET. VDSS = 600V, RDS(on) = 4.4 Ohm, ID = 2.2A | International-Rectifier | - | 3 | -55°C | 150°C | 355 K |
IRFBC30 | HEXFET power MOSFET. VDSS = 600V, RDS(on) = 2.2 Ohm, ID = 3.6A | International-Rectifier | - | 3 | -55°C | 150°C | 173 K |
IRFBC30A | HEXFET power MOSFET. VDSS = 600V, RDS(on) = 2.2 Ohm, ID = 3.6A | International-Rectifier | - | 3 | -55°C | 150°C | 101 K |
<< [56] [57] [58] [59] [60] 61 [62] [63] [64] [65] [66] >> |
---|