Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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IRFBC30AS | HEXFET power MOSFET. VDSS = 600V, RDS(on) = 2.2 Ohm, ID = 3.6A | International-Rectifier | DDPak | 3 | -55°C | 150°C | 147 K |
IRFBC30L | HEXFET power MOSFET. VDSS = 600V, RDS(on) = 2.2 Ohm, ID = 3.6A | International-Rectifier | - | 3 | -55°C | 150°C | 147 K |
IRFBC30S | HEXFET power MOSFET. VDSS = 600V, RDS(on) = 2.2 Ohm, ID = 3.6A | International-Rectifier | DDPak | 3 | -55°C | 150°C | 362 K |
IRFBC40A | HEXFET power MOSFET. VDSS = 600V, RDS(on) = 1.2 Ohm, ID = 6.2A | International-Rectifier | - | 3 | -55°C | 150°C | 97 K |
IRFBC40AS | HEXFET power MOSFET. VDSS = 600V, RDS(on) = 1.2 Ohm, ID = 6.2A | International-Rectifier | DDPak | 3 | -55°C | 150°C | 111 K |
IRFBC40L | HEXFET power MOSFET. VDSS = 600V, RDS(on) = 1.2 Ohm, ID = 6.2A | International-Rectifier | - | 3 | -55°C | 150°C | 350 K |
IRFBC40L | HEXFET power MOSFET. VDSS = 600V, RDS(on) = 1.2 Ohm, ID = 6.2A | International-Rectifier | - | 3 | -55°C | 150°C | 350 K |
IRFBC40S | HEXFET power MOSFET. VDSS = 600V, RDS(on) = 1.2 Ohm, ID = 6.2A | International-Rectifier | DDPak | 3 | -55°C | 150°C | 350 K |
IRFBE20 | HEXFET power MOSFET. VDSS = 800V, RDS(on) = 6.5 Ohm, ID = 1.8A | International-Rectifier | - | 3 | -55°C | 150°C | 171 K |
IRFBE30 | HEXFET power MOSFET. VDSS = 800V, RDS(on) = 3.0 Ohm, ID = 4.1A | International-Rectifier | - | 3 | -55°C | 150°C | 167 K |
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