Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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IRFBF20 | HEXFET power MOSFET. VDSS = 900V, RDS(on) = 8.0 Ohm, ID = 1.7A | International-Rectifier | - | 3 | -55°C | 150°C | 168 K |
IRFBF20L | HEXFET power MOSFET. VDSS = 900V, RDS(on) = 8.0 Ohm, ID = 1.7A | International-Rectifier | - | 3 | -55°C | 150°C | 311 K |
IRFBF20S | HEXFET power MOSFET. VDSS = 900V, RDS(on) = 8.0 Ohm, ID = 1.7A | International-Rectifier | DDPak | 3 | -55°C | 150°C | 311 K |
IRFBF30 | HEXFET power MOSFET. VDSS = 900V, RDS(on) = 3.7 Ohm, ID = 3.6A | International-Rectifier | - | 3 | -55°C | 150°C | 166 K |
IRFBG20 | HEXFET power MOSFET. VDSS = 1000V, RDS(on) = 11Ohm, ID = 1.4A | International-Rectifier | - | 3 | -55°C | 150°C | 169 K |
IRFBG30 | HEXFET power MOSFET. VDSS = 1000V, RDS(on) = 5.0 Ohm, ID = 3.1A | International-Rectifier | - | 3 | -55°C | 150°C | 167 K |
IRFD014 | HEXFET power MOSFET. VDSS = 60V, RDS(on) = 0.20 Ohm, ID = 1.7A | International-Rectifier | - | 4 | -55°C | 175°C | 171 K |
IRFD024 | HEXFET power MOSFET. VDSS = 60V, RDS(on) = 0.10 Ohm, ID = 2.5A | International-Rectifier | - | 4 | -55°C | 175°C | 172 K |
IRFD110 | HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.54 Ohm, ID = 1.0 A | International-Rectifier | - | 4 | -55°C | 175°C | 174 K |
IRFD120 | HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.27 Ohm, ID = 1.3 A | International-Rectifier | - | 4 | -55°C | 175°C | 176 K |
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