Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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IRFI360 | HEXFET transistor (N-channel). BVDSS = 400V, RDS(on) = 0.20 Ohm, ID = 25 A | International-Rectifier | - | 3 | -55°C | 150°C | 210 K |
IRFI460 | HEXFET transistor (N-channel). BVDSS = 500V, RDS(on) = 0.27 Ohm, ID = 21 A | International-Rectifier | - | 3 | -55°C | 150°C | 211 K |
IRFI520N | HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.20 Ohm, ID = 7.6 A | International-Rectifier | - | 3 | -55°C | 175°C | 133 K |
IRFI540N | HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.052 Ohm, ID = 20 A | International-Rectifier | - | 3 | -55°C | 175°C | 131 K |
IRFI614G | HEXFET power MOSFET. VDSS = 250V, RDS(on) = 2.0 Ohm, ID = 2.1 A | International-Rectifier | - | 3 | -55°C | 150°C | 173 K |
IRFI614G | HEXFET power MOSFET. VDSS = 250V, RDS(on) = 2.0 Ohm, ID = 2.1 A | International-Rectifier | - | 3 | -55°C | 150°C | 173 K |
IRFI614G | HEXFET power MOSFET. VDSS = 250V, RDS(on) = 2.0 Ohm, ID = 2.1 A | International-Rectifier | - | 3 | -55°C | 150°C | 173 K |
IRFI620G | HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.80 Ohm, ID = 4 .1 A | International-Rectifier | - | 3 | -55°C | 150°C | 173 K |
IRFI624G | HEXFET power MOSFET. VDSS = 250V, RDS(on) = 1.1 Ohm, ID = 3.4 A | International-Rectifier | - | 3 | -55°C | 150°C | 170 K |
IRFI630G | HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.40 Ohm, ID = 5.9 A | International-Rectifier | - | 3 | -55°C | 150°C | 176 K |
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