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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
IRFR9310HEXFET power MOSFET. VDSS = -400V, RDS(on) = 7.0 Ohm, ID = -1.8AInternational-Rectifier-3-55°C150°C116 K
IRFR9310HEXFET power MOSFET. VDSS = -400V, RDS(on) = 7.0 Ohm, ID = -1.8AInternational-Rectifier-3-55°C150°C116 K
IRFR9N20DHEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.38 Ohm, ID = 9.4AInternational-Rectifier-3-55°C175°C126 K
IRFRC20HEXFET power MOSFET. VDSS = 600V, RDS(on) = 4.4 Ohm, ID = 2.0AInternational-Rectifier-3-55°C150°C169 K
IRFU9220HEXFET power MOSFET. VDSS = -200V, RDS(on) = 1.5 Ohm, ID = -3.6AInternational-Rectifier-3-55°C150°C169 K
IRFU9220HEXFET power MOSFET. VDSS = -200V, RDS(on) = 1.5 Ohm, ID = -3.6AInternational-Rectifier-3-55°C150°C169 K
IRFU9310HEXFET power MOSFET. VDSS = -400V, RDS(on) = 7.0 Ohm, ID = -1.8AInternational-Rectifier-3-55°C150°C116 K
IRFU9N20DHEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.38 Ohm, ID = 9.4AInternational-Rectifier-3-55°C175°C126 K
IRFUC20HEXFET power MOSFET. VDSS = 600V, RDS(on) = 4.4 Ohm, ID = 2.0AInternational-Rectifier-3-55°C150°C169 K
IRFUC20HEXFET power MOSFET. VDSS = 600V, RDS(on) = 4.4 Ohm, ID = 2.0AInternational-Rectifier-3-55°C150°C169 K
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