Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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IRF140 | 28A and 25A, 80V and 100V, 0.077 and 0.100 Ohm, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 55 K |
IRF140 | Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole. BVDSS = 100V, RDS(on) = 0.077 Ohm, ID = 28A. | International-Rectifier | - | 3 | -55°C | 175°C | 144 K |
IRF140 | Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole. BVDSS = 100V, RDS(on) = 0.077 Ohm, ID = 28A. | International-Rectifier | - | 3 | -55°C | 175°C | 144 K |
IRF140 | Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole. BVDSS = 100V, RDS(on) = 0.077 Ohm, ID = 28A. | International-Rectifier | - | 3 | -55°C | 175°C | 144 K |
IRF140 | 100V Vdss N-Channel FET (field effect transistor) | Semelab-Plc- | TO3 | - | - | - | 22 K |
IRF1404 | HEXFET power MOSFET. VDSS = 40V, RDS(on) = 0.004 Ohm, ID = 162A. | International-Rectifier | - | 3 | -55°C | 175°C | 107 K |
IRF1404S | HEXFET power MOSFET. VDSS = 40V, RDS(on) = 0.004 Ohm, ID = 162A. | International-Rectifier | DDPak | 3 | -55°C | 175°C | 306 K |
IRF140SMD | 100V Vdss N-Channel FET (field effect transistor) | Semelab-Plc- | TO3 | - | - | - | 22 K |
IRF142 | 28A and 25A, 80V and 100V, 0.077 and 0.100 Ohm, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 55 K |
IRF143 | 28A and 25A, 80V and 100V, 0.077 and 0.100 Ohm, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 55 K |
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