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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
IRF360HEXFET transistor thru-hole. VDSS = 400V, RDS(on) = 0.20 Ohm, ID = 25AInternational-Rectifier-3-55°C150°C139 K
IRF3703HEXFET power MOSFET. VDSS = 30V, RDS(on) = 2.8 mOhm, ID = 210AInternational-Rectifier-3-55°C175°C95 K
IRF3704HEXFET power MOSFET. VDSS = 20V, RDS(on) = 9.0 mOhm, ID = 77AInternational-Rectifier-3-55°C175°C125 K
IRF3704LHEXFET power MOSFET. VDSS = 20V, RDS(on) = 9.0 mOhm, ID = 77AInternational-Rectifier-3-55°C175°C125 K
IRF3704SHEXFET power MOSFET. VDSS = 20V, RDS(on) = 9.0 mOhm, ID = 77AInternational-RectifierDDPak3-55°C175°C125 K
IRF3706HEXFET power MOSFET. VDSS = 20V, RDS(on) = 8.5 mOhm, ID = 77AInternational-Rectifier-3-55°C175°C145 K
IRF3706LHEXFET power MOSFET. VDSS = 20V, RDS(on) = 8.5 mOhm, ID = 77AInternational-Rectifier-3-55°C175°C145 K
IRF3706SHEXFET power MOSFET. VDSS = 20V, RDS(on) = 8.5 mOhm, ID = 77AInternational-RectifierDDPak3-55°C175°C145 K
IRF3707HEXFET power MOSFET. VDSS = 30V, RDS(on) = 12.5 mOhm, ID = 62AInternational-Rectifier-3-55°C175°C143 K
IRF3707SHEXFET power MOSFET. VDSS = 30V, RDS(on) = 12.5 mOhm, ID = 62AInternational-RectifierDDPak3-55°C175°C143 K
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