| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IRF330 | Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole(TO-204AA/AE). BVDSS =400V, RDS(on) = 1.0 Ohm, ID = 5.5A | International-Rectifier | - | 3 | -55°C | 150°C | 146 K |
| IRF350 | Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole(TO-204AA/AE). BVDSS = 400V, RDS(on) = 0.300 Ohm, ID = 14A | International-Rectifier | - | 3 | -55°C | 150°C | 144 K |
| IRF3710L | HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.025 Ohm, ID = 57A | International-Rectifier | - | 3 | -55°C | 175°C | 184 K |
| IRF3711 | HEXFET power MOSFET. VDSS = 20V, RDS(on) = 6.0 mOhm, ID = 110A | International-Rectifier | - | 3 | -55°C | 150°C | 245 K |
| IRF3711L | HEXFET power MOSFET. VDSS = 20V, RDS(on) = 6.0 mOhm, ID = 110A | International-Rectifier | - | 3 | -55°C | 150°C | 245 K |
| IRF3711S | HEXFET power MOSFET. VDSS = 20V, RDS(on) = 6.0 mOhm, ID = 110A | International-Rectifier | DDPak | 3 | -55°C | 150°C | 245 K |
| IRF3808 | HEXFET power MOSFET. VDSS = 75V, RDS(on) = 0.007 Ohm, ID = 140A | International-Rectifier | - | 3 | -55°C | 175°C | 131 K |
| IRF3808L | HEXFET power MOSFET. VDSS = 75V, RDS(on) = 0.007 Ohm, ID = 106A | International-Rectifier | - | 3 | -55°C | 175°C | 161 K |
| IRF3808S | HEXFET power MOSFET. VDSS = 75V, RDS(on) = 0.007 Ohm, ID = 106A | International-Rectifier | DDPak | 3 | -55°C | 175°C | 161 K |
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