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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
IRF5105.6A, 100V, 0.540 Ohm, N-Channel Power MOSFETIntersil-Corporation----70 K
IRF510HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.54 Ohm, ID = 5.6AInternational-Rectifier-3-55°C175°C175 K
IRF510SHEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.54 Ohm, ID = 5.6AInternational-Rectifier-3-55°C175°C178 K
IRF5209.2A, 100V, 0.270 Ohm, N-Channel Power MOSFETIntersil-Corporation----69 K
IRF520NHEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.20 Ohm, ID = 9.7AInternational-Rectifier-3-55°C175°C116 K
IRF520NSHEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.20 Ohm, ID = 9.7AInternational-RectifierDDPak3-55°C175°C185 K
IRF530N22A, 100V, 0.064 Ohm, N-Channel Power MOSFETIntersil-Corporation----125 K
IRF540N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORSSGS-Thomson-Microelectronics----53 K
IRF540FIN-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORSSGS-Thomson-Microelectronics----53 K
IRF540N33A, 100V, 0.040 Ohm, N-Channel Power MOSFETIntersil-Corporation----126 K
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