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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
IRF530NLHEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.11 Ohm, ID = 17AInternational-Rectifier-3-55°C175°C178 K
IRF530NSHEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.11 Ohm, ID = 17AInternational-RectifierDDPak3-55°C175°C178 K
IRF540NHEXFET power MOSFET. VDSS = 100V, RDS(on) = 44 mOhm, ID = 33AInternational-Rectifier-3-55°C175°C99 K
IRF540NLHEXFET power MOSFET. VDSS = 100V, RDS(on) = 44 mOhm, ID = 33AInternational-Rectifier-3-55°C175°C125 K
IRF540NLHEXFET power MOSFET. VDSS = 100V, RDS(on) = 44 mOhm, ID = 33AInternational-Rectifier-3-55°C175°C125 K
IRF540NSHEXFET power MOSFET. VDSS = 100V, RDS(on) = 44 mOhm, ID = 33AInternational-RectifierDDPak3-55°C175°C125 K
IRF5800HEXFET power MOSFET. VDSS = -30V, RDS(on) = 0.085 OhmInternational-RectifierTSOP6-55°C150°C98 K
IRF5801HEXFET power MOSFET. VDSS = 200V, RDS(on) = 2.2 Ohm, ID = 0.6AInternational-RectifierTSOP6-55°C150°C120 K
IRF5803HEXFET power MOSFET. VDSS = -40V, RDS(on) = 112 mOhm, ID = -3.4A @ VGS = -10V, RDS(on) = 190 mOhm , ID = -2.7A @ VGS = -4.5VInternational-RectifierTSOP6-55°C150°C109 K
IRF5803D2FETKY MOSFET & schottky diode. VDSS = -40V, RDS(on) = 112 mOhm, schottky Vf = 0.51VInternational-RectifierSO8-55°C150°C127 K
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