Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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IRF530NL | HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.11 Ohm, ID = 17A | International-Rectifier | - | 3 | -55°C | 175°C | 178 K |
IRF530NS | HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.11 Ohm, ID = 17A | International-Rectifier | DDPak | 3 | -55°C | 175°C | 178 K |
IRF540N | HEXFET power MOSFET. VDSS = 100V, RDS(on) = 44 mOhm, ID = 33A | International-Rectifier | - | 3 | -55°C | 175°C | 99 K |
IRF540NL | HEXFET power MOSFET. VDSS = 100V, RDS(on) = 44 mOhm, ID = 33A | International-Rectifier | - | 3 | -55°C | 175°C | 125 K |
IRF540NL | HEXFET power MOSFET. VDSS = 100V, RDS(on) = 44 mOhm, ID = 33A | International-Rectifier | - | 3 | -55°C | 175°C | 125 K |
IRF540NS | HEXFET power MOSFET. VDSS = 100V, RDS(on) = 44 mOhm, ID = 33A | International-Rectifier | DDPak | 3 | -55°C | 175°C | 125 K |
IRF5800 | HEXFET power MOSFET. VDSS = -30V, RDS(on) = 0.085 Ohm | International-Rectifier | TSOP | 6 | -55°C | 150°C | 98 K |
IRF5801 | HEXFET power MOSFET. VDSS = 200V, RDS(on) = 2.2 Ohm, ID = 0.6A | International-Rectifier | TSOP | 6 | -55°C | 150°C | 120 K |
IRF5803 | HEXFET power MOSFET. VDSS = -40V, RDS(on) = 112 mOhm, ID = -3.4A @ VGS = -10V, RDS(on) = 190 mOhm , ID = -2.7A @ VGS = -4.5V | International-Rectifier | TSOP | 6 | -55°C | 150°C | 109 K |
IRF5803D2 | FETKY MOSFET & schottky diode. VDSS = -40V, RDS(on) = 112 mOhm, schottky Vf = 0.51V | International-Rectifier | SO | 8 | -55°C | 150°C | 127 K |
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