| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IRF5804 | HEXFET power MOSFET. VDSS = -40V, RDS(on) = 198 mOhm, ID = -2.5A @ VGS = -10V, RDS(on) = 334 mOhm, ID = -2.0A @ VGS = -4.5V | International-Rectifier | TSOP | 6 | -55°C | 150°C | 99 K |
| IRF5805 | HEXFET power MOSFET. VDSS = -30V, RDS(on) = 0.098 Ohm, ID = -3.8A @ VGS = -10V, RDS(on) = 0.165 Ohm, ID = -3.0A @ VGS = -4.5V | International-Rectifier | TSOP | 6 | -55°C | 150°C | 126 K |
| IRF5806 | HEXFET power MOSFET. VDSS = -20V, RDS(on) = 86 mOhm, ID = -4.0A @ VGS = -4.5V, RDS(on) = 147 mOhm, ID = -3.0A @ VGS = -2.5V | International-Rectifier | Micro6 | 6 | -55°C | 150°C | 218 K |
| IRF5810 | HEXFET power MOSFET. VDSS = -20V, RDS(on) = 90 mOhm, ID = -2.9A @ VGS = -4.5V, RDS(on) = 135 mOhm, ID = -2.3A @ VGS = -2.5V | International-Rectifier | TSOP | 6 | -55°C | 150°C | 208 K |
| IRF5850 | HEXFET power MOSFET. VDSS = -20V, RDS(on) = 0.135 Ohm | International-Rectifier | TSOP | 6 | -55°C | 150°C | 126 K |
| IRF5851 | HEXFET power MOSFET. VDSS = -20V, RDS(on) = 0.135 Ohm (P-Ch). VDSS = 20V, RDS(on) = 0.090 Ohm (N-Ch) | International-Rectifier | TSOP | 6 | -55°C | 150°C | 172 K |
| IRF5852 | HEXFET power MOSFET. VDSS = 20V, RDS(on) = 0.090 Ohm, ID = 2.7A @ VGS = 4.5V, RDS(on) = 0.120 Ohm, ID = 2.2A @ VGS = 2.5V | International-Rectifier | TSOP | 6 | -55°C | 150°C | 239 K |
| IRF5EA1310 | HEXFET power MOSFET surface mount. BVDSS = 100V, RDS(on) = 0.036 Ohm, ID = 23A | International-Rectifier | LCC | 28 | -55°C | 150°C | 238 K |
| IRF5M3205 | HEXFET power MOSFET thru-hole. BVDSS = 55V, RDS(on) = 0.015 Ohm, ID = 35A | International-Rectifier | - | 3 | -55°C | 150°C | 113 K |
| IRF5M3415 | HEXFET power MOSFET thru-hole. BVDSS = 150V, RDS(on) = 0.049 Ohm, ID = 35A | International-Rectifier | - | 3 | -55°C | 150°C | 113 K |
| [1] [2] [3] [4] 5 [6] [7] [8] [9] [10] |
|---|
