| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IRF510 | N-channel power MOSFET, 100V, 5.6A | Harris-Semiconductor | - | 3 | -55°C | 175°C | 68 K |
| IRF511 | N-channel power MOSFET, 80V, 5.6A | Harris-Semiconductor | - | 3 | -55°C | 175°C | 68 K |
| IRF512 | N-channel power MOSFET, 100V, 4.9A | Harris-Semiconductor | - | 3 | -55°C | 175°C | 68 K |
| IRF513 | N-channel power MOSFET, 80V, 4.9A | Harris-Semiconductor | - | 3 | -55°C | 175°C | 68 K |
| IRF530 | Power MOSFET, 100V, 14A | International-Rectifier | - | 3 | -55°C | 175°C | 175 K |
| IRF530 | 100 V, 14 A, power field effect transistor | distributor | TO | 3 | -55°C | 150°C | 481 K |
| IRF5305S | Power MOSFET, 55V, 31A | International-Rectifier | D2PAK | 3 | -55°C | 175°C | 171 K |
| IRF5Y6215CM | HEXFET power MOSFET thru-hole. BVDSS = -150V, RDS(on) = 0.29 Ohm, ID = -11A | International-Rectifier | - | 3 | -55°C | 150°C | 103 K |
| IRF5Y9540CM | HEXFET power MOSFET thru-hole. BVDSS = -100V, RDS(on) = 0.117 Ohm, ID = -18A | International-Rectifier | - | 3 | -55°C | 150°C | 105 K |
| IRF5YZ48CM | HEXFET power MOSFET thru-hole. BVDSS = 55V, RDS(on) = 0.029 Ohm, ID = 18A | International-Rectifier | - | 3 | -55°C | 150°C | 105 K |
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