| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IRF530 | Power MOSFET, 100V, 14A | International-Rectifier | - | 3 | -55°C | 175°C | 175 K |
| IRF530 | 100 V, 14 A, power field effect transistor | distributor | TO | 3 | -55°C | 150°C | 481 K |
| IRF5305S | Power MOSFET, 55V, 31A | International-Rectifier | D2PAK | 3 | -55°C | 175°C | 171 K |
| IRF530A | N-CHANNEL POWER MOSFET | Fairchild-Semiconductor | - | - | - | - | 254 K |
| IRF530F1 | N-channel MOSFET, 100V, 9A | SGS-Thomson-Microelectronics | ISOWATT220 | 3 | -55°C | 150°C | 187 K |
| IRF530NL | HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.11 Ohm, ID = 17A | International-Rectifier | - | 3 | -55°C | 175°C | 178 K |
| IRF530S | Power MOSFET, 100V, 14A | International-Rectifier | - | 3 | -55°C | 175°C | 180 K |
| IRF531F1 | N-channel MOSFET, 80V, 9A | SGS-Thomson-Microelectronics | ISOWATT220 | 3 | -55°C | 150°C | 187 K |
| IRF532F1 | N-channel MOSFET, 100V, 8A | SGS-Thomson-Microelectronics | ISOWATT220 | 3 | -55°C | 150°C | 187 K |
| IRF533F1 | N-channel MOSFET, 80V, 8A | SGS-Thomson-Microelectronics | ISOWATT220 | 3 | -55°C | 150°C | 187 K |
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