Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
---|
IRF820 | N-channel MOSFET, 500V, 2.5A | Samsung-Electronic | - | 3 | -55°C | 150°C | 322 K |
IRF820B | 500V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 858 K |
IRF821 | N-channel MOSFET, 450V, 2.5A | Samsung-Electronic | - | 3 | -55°C | 150°C | 322 K |
IRF821 | N-channel MOSFET, 450V, 2.5A | SGS-Thomson-Microelectronics | - | 3 | -55°C | 150°C | 341 K |
IRF821FI | N-channel MOSFET, 450V, 2.0A | SGS-Thomson-Microelectronics | ISOWATT220 | 3 | -55°C | 150°C | 341 K |
IRF823 | N-channel MOSFET, 450V, 2.2A | SGS-Thomson-Microelectronics | - | 3 | -55°C | 150°C | 341 K |
IRF823FI | N-channel MOSFET, 450V, 1.5A | SGS-Thomson-Microelectronics | ISOWATT220 | 3 | -55°C | 150°C | 341 K |
IRF823FI | N-channel MOSFET, 450V, 1.5A | SGS-Thomson-Microelectronics | ISOWATT220 | 3 | -55°C | 150°C | 341 K |
IRF830B | 500V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 888 K |
IRF840B | 500V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 911 K |
[1] [2] [3] [4] 5 [6] |
---|