| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IRF820 | N-channel MOSFET, 500V, 2.5A | Samsung-Electronic | - | 3 | -55°C | 150°C | 322 K |
| IRF820B | 500V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 858 K |
| IRF821 | N-channel MOSFET, 450V, 2.5A | Samsung-Electronic | - | 3 | -55°C | 150°C | 322 K |
| IRF821 | N-channel MOSFET, 450V, 2.5A | SGS-Thomson-Microelectronics | - | 3 | -55°C | 150°C | 341 K |
| IRF821FI | N-channel MOSFET, 450V, 2.0A | SGS-Thomson-Microelectronics | ISOWATT220 | 3 | -55°C | 150°C | 341 K |
| IRF822 | N-channel MOSFET, 500V, 2.2A | Samsung-Electronic | - | 3 | -55°C | 150°C | 322 K |
| IRF822 | N-channel enhancement mode power MOS transistor, 500V, 2.8A | SGS-Thomson-Microelectronics | - | 3 | -65°C | 150°C | 169 K |
| IRF823 | N-channel MOSFET, 450V, 2.2A | SGS-Thomson-Microelectronics | - | 3 | -55°C | 150°C | 341 K |
| IRF823FI | N-channel MOSFET, 450V, 1.5A | SGS-Thomson-Microelectronics | ISOWATT220 | 3 | -55°C | 150°C | 341 K |
| IRF823FI | N-channel MOSFET, 450V, 1.5A | SGS-Thomson-Microelectronics | ISOWATT220 | 3 | -55°C | 150°C | 341 K |
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