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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
IRF820N-channel MOSFET, 500V, 2.5ASamsung-Electronic-3-55°C150°C322 K
IRF820B500V N-Channel MOSFETFairchild-Semiconductor----858 K
IRF821N-channel MOSFET, 450V, 2.5ASamsung-Electronic-3-55°C150°C322 K
IRF821N-channel MOSFET, 450V, 2.5ASGS-Thomson-Microelectronics-3-55°C150°C341 K
IRF821FIN-channel MOSFET, 450V, 2.0ASGS-Thomson-MicroelectronicsISOWATT2203-55°C150°C341 K
IRF822N-channel MOSFET, 500V, 2.2ASamsung-Electronic-3-55°C150°C322 K
IRF822N-channel enhancement mode power MOS transistor, 500V, 2.8ASGS-Thomson-Microelectronics-3-65°C150°C169 K
IRF823N-channel MOSFET, 450V, 2.2ASGS-Thomson-Microelectronics-3-55°C150°C341 K
IRF823FIN-channel MOSFET, 450V, 1.5ASGS-Thomson-MicroelectronicsISOWATT2203-55°C150°C341 K
IRF823FIN-channel MOSFET, 450V, 1.5ASGS-Thomson-MicroelectronicsISOWATT2203-55°C150°C341 K
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