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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
IRFBC20HEXFET power MOSFET. VDSS = 600V, RDS(on) = 4.4 Ohm, ID = 2.2AInternational-Rectifier-3-55°C150°C171 K
IRFBC20LHEXFET power MOSFET. VDSS = 600V, RDS(on) = 4.4 Ohm, ID = 2.2AInternational-Rectifier-3-55°C150°C355 K
IRFBC30HEXFET power MOSFET. VDSS = 600V, RDS(on) = 2.2 Ohm, ID = 3.6AInternational-Rectifier-3-55°C150°C173 K
IRFBC30N-CHANNEL 600V - 1.8 OHM - 3.6A - TO-220 POWERMESH MOSFETSGS-Thomson-Microelectronics----85 K
IRFBC30AHEXFET power MOSFET. VDSS = 600V, RDS(on) = 2.2 Ohm, ID = 3.6AInternational-Rectifier-3-55°C150°C101 K
IRFBC30ASHEXFET power MOSFET. VDSS = 600V, RDS(on) = 2.2 Ohm, ID = 3.6AInternational-RectifierDDPak3-55°C150°C147 K
IRFBC30LHEXFET power MOSFET. VDSS = 600V, RDS(on) = 2.2 Ohm, ID = 3.6AInternational-Rectifier-3-55°C150°C147 K
IRFBC30SHEXFET power MOSFET. VDSS = 600V, RDS(on) = 2.2 Ohm, ID = 3.6AInternational-RectifierDDPak3-55°C150°C362 K
IRFBC40N-CHANNEL 600V - 1.0 OHM - 6.2A - TO-220 POWERMESH MOSFETSGS-Thomson-Microelectronics----92 K
IRFBC40N-CHANNEL 600V - 1.0 OHM - 6.2A - TO-220 POWERMESH MOSFETSGS-Thomson-Microelectronics----92 K
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