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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
SMCJ100A100.00V; 1mA ;1500W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applicationsdistributor-2-55°C150°C607 K
SMDJ100100.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applicationsdistributor-2-55°C150°C588 K
SMDJ100A100.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applicationsdistributor-2-55°C150°C588 K
SMLJ100100.00V; 1mA; 3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applicationsdistributor-2-55°C150°C588 K
SMLJ100A100.00V; 1mA; 3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applicationsdistributor-2-55°C150°C588 K
SMTBJ100ASMTBJ SiBOD, bi-directional transient voltage protection. Vrm = 100V. Peak pulse current Ipp = 50A (10/1000usec), 150A (8-20us expo).distributor-20°C150°C81 K
SMTBJ100BSMTBJ SiBOD, bi-directional transient voltage protection. Vrm = 100V. Peak pulse current Ipp = 100A (10/1000usec), 250A (8-20us expo).distributor-20°C150°C81 K
TMS320C52PJ10016-Bit digital signal processor, data RAM=544 words, data+prog=512 words, ROM=4K, 5.0V, 100 MHzTexas-InstrumentsQFP1000°C70°C1 M
TSMBJ1006CBi-directional 100Amp, 60V, thyristor surge protective deviceMicrosemi-Corporation-3-40°C150°C179 K
TSMBJ1006CBi-directional 100Amp, 60V, thyristor surge protective deviceMicrosemi-Corporation-3-40°C150°C179 K
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