Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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SMCJ100A | 100.00V; 1mA ;1500W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications | distributor | - | 2 | -55°C | 150°C | 607 K |
SMDJ100 | 100.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications | distributor | - | 2 | -55°C | 150°C | 588 K |
SMDJ100A | 100.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications | distributor | - | 2 | -55°C | 150°C | 588 K |
SMLJ100 | 100.00V; 1mA; 3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications | distributor | - | 2 | -55°C | 150°C | 588 K |
SMLJ100A | 100.00V; 1mA; 3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications | distributor | - | 2 | -55°C | 150°C | 588 K |
SMTBJ100A | SMTBJ SiBOD, bi-directional transient voltage protection. Vrm = 100V. Peak pulse current Ipp = 50A (10/1000usec), 150A (8-20us expo). | distributor | - | 2 | 0°C | 150°C | 81 K |
SMTBJ100B | SMTBJ SiBOD, bi-directional transient voltage protection. Vrm = 100V. Peak pulse current Ipp = 100A (10/1000usec), 250A (8-20us expo). | distributor | - | 2 | 0°C | 150°C | 81 K |
TMS320C52PJ100 | 16-Bit digital signal processor, data RAM=544 words, data+prog=512 words, ROM=4K, 5.0V, 100 MHz | Texas-Instruments | QFP | 100 | 0°C | 70°C | 1 M |
TSMBJ1006C | Bi-directional 100Amp, 60V, thyristor surge protective device | Microsemi-Corporation | - | 3 | -40°C | 150°C | 179 K |
TSMBJ1006C | Bi-directional 100Amp, 60V, thyristor surge protective device | Microsemi-Corporation | - | 3 | -40°C | 150°C | 179 K |
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