| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BUJ101A | 700 V, silicon diffused power transistor | Philips-Semiconductors | SOT | 3 | - | - | 19 K |
| TSMBJ1010C | Bi-directional 100Amp, 100V, thyristor surge protective device | Microsemi-Corporation | - | 3 | -40°C | 150°C | 179 K |
| TSMBJ1012C | Bi-directional 100Amp, 120V, thyristor surge protective device | Microsemi-Corporation | - | 3 | -40°C | 150°C | 179 K |
| TSMBJ1014C | Bi-directional 100Amp, 140V, thyristor surge protective device | Microsemi-Corporation | - | 3 | -40°C | 150°C | 179 K |
| TSMBJ1016C | Bi-directional 100Amp, 160V, thyristor surge protective device | Microsemi-Corporation | - | 3 | -40°C | 150°C | 179 K |
| TSMBJ1018C | Bi-directional 100Amp, 180V, thyristor surge protective device | Microsemi-Corporation | - | 3 | -40°C | 150°C | 179 K |
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