Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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K4S160822DT-G/F10 | 1M x 8bit x 2 banks synchronous DRAM. 2M x 8 SDRAM. Max freq. 100 MHz, interface LVTTL. | Samsung-Electronic | TSOP (II) | 44 | 0°C | 70°C | 1 M |
K4S160822DT-G/F7 | 1M x 8bit x 2 banks synchronous DRAM. 2M x 8 SDRAM. Max freq. 143 MHz, interface LVTTL. | Samsung-Electronic | TSOP (II) | 44 | 0°C | 70°C | 1 M |
K4S160822DT-G/F8 | 1M x 8bit x 2 banks synchronous DRAM. 2M x 8 SDRAM. Max freq. 125 MHz, interface LVTTL. | Samsung-Electronic | TSOP (II) | 44 | 0°C | 70°C | 1 M |
K4S160822DT-G/FH | 1M x 8bit x 2 banks synchronous DRAM. 2M x 8 SDRAM. Max freq. 100 MHz, interface LVTTL. | Samsung-Electronic | TSOP (II) | 44 | 0°C | 70°C | 1 M |
K4S160822DT-G/FL | 1M x 8bit x 2 banks synchronous DRAM. 2M x 8 SDRAM. Max freq. 100 MHz, interface LVTTL. | Samsung-Electronic | TSOP (II) | 44 | 0°C | 70°C | 1 M |
K4S161622D-TC/L10 | 512K x 16bit x 2 banks synchronous DRAM. Max freq. 100 MHz, interface LVTTL. | Samsung-Electronic | TSOP (II) | 50 | 0°C | 70°C | 1 M |
K4S161622D-TC/L55 | 512K x 16bit x 2 banks synchronous DRAM. Max freq. 183 MHz, interface LVTTL. | Samsung-Electronic | TSOP (II) | 50 | 0°C | 70°C | 1 M |
K4S161622D-TC/L60 | 512K x 16bit x 2 banks synchronous DRAM. Max freq. 166 MHz, interface LVTTL. | Samsung-Electronic | TSOP (II) | 50 | 0°C | 70°C | 1 M |
K4S161622D-TC/L70 | 512K x 16bit x 2 banks synchronous DRAM. Max freq. 143 MHz, interface LVTTL. | Samsung-Electronic | TSOP (II) | 50 | 0°C | 70°C | 1 M |
K4S161622D-TC/L80 | 512K x 16bit x 2 banks synchronous DRAM. Max freq. 125 MHz, interface LVTTL. | Samsung-Electronic | TSOP (II) | 50 | 0°C | 70°C | 1 M |
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