| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BUK555-100A | PowerMOS transistor. Logic level FET. Drain-source voltage 100 V. Drain current(DC) 25 A. | Philips-Semiconductors | TO220AB | 3 | 0°C | 175°C | 69 K |
| BUK555-100B | PowerMOS transistor logic level FET, drain-source voltage=100V, drain current=22A, drain-source on-state resistance=0.11 Ohm | Philips-Semiconductors | - | 3 | -55°C | 175°C | 54 K |
| BUK555-100B | PowerMOS transistor. Logic level FET. Drain-source voltage 100 V. Drain current(DC) 22 A. | Philips-Semiconductors | TO220AB | 3 | 0°C | 175°C | 69 K |
| BUK555-200A | 200 V, power MOS transistor | Philips-Semiconductors | SOT | 3 | - | - | 55 K |
| BUK555-200A | PowerMOS transistor. Logic level FET. Drain-source voltage 200 V. Drain current(DC) 14 A. | Philips-Semiconductors | TO220AB | 3 | 0°C | 175°C | 70 K |
| BUK555-200B | 200 V, power MOS transistor | Philips-Semiconductors | SOT | 3 | - | - | 55 K |
| BUK555-200B | PowerMOS transistor. Logic level FET. Drain-source voltage 200 V. Drain current(DC) 13 A. | Philips-Semiconductors | TO220AB | 3 | 0°C | 175°C | 70 K |
| BUK555-60A | 60 V, power MOS transistor | Philips-Semiconductors | SOT | 3 | - | - | 55 K |
| BUK555-60B | 60 V, power MOS transistor | Philips-Semiconductors | SOT | 3 | - | - | 55 K |
| BUK555-60H | 60 V, power MOS transistor | Philips-Semiconductors | SOT | 3 | - | - | 69 K |
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