| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| KM4132G271AQ-10 | 128K x 32bit x 2 banks synchronous graphic RAM, 3.3V, 10ns | Samsung-Electronic | QFP | 100 | 0°C | 70°C | 1000 K |
| KM4132G271AQ-12 | 128K x 32bit x 2 banks synchronous graphic RAM, 3.3V, 12ns | Samsung-Electronic | QFP | 100 | 0°C | 70°C | 1000 K |
| KM4132G271AQ-8 | 128K x 32bit x 2 banks synchronous graphic RAM, 3.3V, 8ns | Samsung-Electronic | QFP | 100 | 0°C | 70°C | 1000 K |
| KM4132G271AQR-10 | 128K x 32bit x 2 banks synchronous graphic RAM, 3.3V, 10ns | Samsung-Electronic | QFP Reverse Type | 100 | 0°C | 70°C | 1000 K |
| KM4132G271AQR-12 | 128K x 32bit x 2 banks synchronous graphic RAM, 3.3V, 12ns | Samsung-Electronic | QFP Reverse Type | 100 | 0°C | 70°C | 1000 K |
| KM4132G271AQR-8 | 128K x 32bit x 2 banks synchronous graphic RAM, 3.3V, 8ns | Samsung-Electronic | QFP Reverse Type | 100 | 0°C | 70°C | 1000 K |
| KM416C4004CS-5 | 4M x 16Bit CMOS dynamic RAM with extended data out, 5V, 8K refresh, 50ns | Samsung-Electronic | TSOP(II) | 50 | 0°C | 70°C | 946 K |
| KM416C4004CS-6 | 4M x 16Bit CMOS dynamic RAM with extended data out, 5V, 8K refresh, 60ns | Samsung-Electronic | TSOP(II) | 50 | 0°C | 70°C | 946 K |
| KM416C4004CS-6 | 4M x 16Bit CMOS dynamic RAM with extended data out, 5V, 8K refresh, 60ns | Samsung-Electronic | TSOP(II) | 50 | 0°C | 70°C | 946 K |
| KM416C4104CS-5 | 4M x 16Bit CMOS dynamic RAM with extended data out, 5V, 4K refresh, 50ns | Samsung-Electronic | TSOP(II) | 50 | 0°C | 70°C | 946 K |
| KM416C4104CS-6 | 4M x 16Bit CMOS dynamic RAM with extended data out, 5V, 4K refresh, 60ns | Samsung-Electronic | TSOP(II) | 50 | 0°C | 70°C | 946 K |
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