Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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KM4100IC8TR3 | HIGH PERF OP AMP | Fairchild-Semiconductor | - | - | - | - | 333 K |
KM4101IC8TR3 | HIGH PERF OP AMP | Fairchild-Semiconductor | - | - | - | - | 333 K |
KM4110IT5TR3 | HIGH PERF OP AMP | Fairchild-Semiconductor | - | - | - | - | 288 K |
KM4120IT6TR3 | HIGH PERF OP AMP | Fairchild-Semiconductor | - | - | - | - | 288 K |
KM416C1004CJ-45 | 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, refresh period=64ms | Samsung-Electronic | SOJ | 42 | 0°C | 70°C | 804 K |
KM416C1004CJ-5 | 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=64ms | Samsung-Electronic | SOJ | 42 | 0°C | 70°C | 804 K |
KM416C1004CJ-6 | 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=64ms | Samsung-Electronic | SOJ | 42 | 0°C | 70°C | 804 K |
KM416C1004CJL-5 | 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, self-refresh | Samsung-Electronic | SOJ | 42 | 0°C | 70°C | 804 K |
KM416C1004CJL-6 | 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh | Samsung-Electronic | SOJ | 42 | 0°C | 70°C | 804 K |
KM416C1204CJL-50 | 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, self-refresh | Samsung-Electronic | SOJ | 42 | 0°C | 70°C | 804 K |
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