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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
KM416C1004CJL-451M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, self-refreshSamsung-ElectronicSOJ420°C70°C804 K
KM416C254DTL-6256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 60ns, self-refreshSamsung-ElectronicTSOP II400°C70°C840 K
KM416V1004CJ-451M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, refresh period=64msSamsung-ElectronicSOJ420°C70°C804 K
KM416V1004CJ-501M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, refresh period=64msSamsung-ElectronicSOJ420°C70°C804 K
KM416V1004CJ-601M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, refresh period=64msSamsung-ElectronicSOJ420°C70°C804 K
KM416V1004CJL-601M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, self-refreshSamsung-ElectronicSOJ420°C70°C804 K
KM416V1004CTL-451M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, self-refreshSamsung-ElectronicTSOP440°C70°C804 K
KM416V1004CTL-501M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, self-refreshSamsung-ElectronicTSOP440°C70°C804 K
KM416V1004CTL-601M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, self-refreshSamsung-ElectronicTSOP440°C70°C804 K
KM416V1204CTL-601M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, self-refreshSamsung-ElectronicTSOP440°C70°C804 K
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