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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
KM416C1204BJ-L455V, 1M x 16 bit CMOS DRAM with extended data out, 45nsSamsung-ElectronicSOJ420°C70°C2 M
KM416C1204BJ-L75V, 1M x 16 bit CMOS DRAM with extended data out, 70nsSamsung-ElectronicSOJ420°C70°C2 M
KM416C1204BT-455V, 1M x 16 bit CMOS DRAM with extended data out, 45nsSamsung-ElectronicTSOP II440°C70°C2 M
KM416C1204BT-55V, 1M x 16 bit CMOS DRAM with extended data out, 50nsSamsung-ElectronicTSOP II440°C70°C2 M
KM416C1204BT-75V, 1M x 16 bit CMOS DRAM with extended data out, 70nsSamsung-ElectronicTSOP II440°C70°C2 M
KM416C1204BT-L455V, 1M x 16 bit CMOS DRAM with extended data out, 45nsSamsung-ElectronicTSOP II440°C70°C2 M
KM416C1204BT-L55V, 1M x 16 bit CMOS DRAM with extended data out, 50nsSamsung-ElectronicTSOP II440°C70°C2 M
KM416C1204BT-L65V, 1M x 16 bit CMOS DRAM with extended data out, 60nsSamsung-ElectronicTSOP II440°C70°C2 M
KM416C1204BT-L75V, 1M x 16 bit CMOS DRAM with extended data out, 70nsSamsung-ElectronicTSOP II440°C70°C2 M
KM416C1204CT-451M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, refresh period=16msSamsung-ElectronicTSOP440°C70°C804 K
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