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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
A29L160TM-120120ns; active read:9mA; programm/erase:20mA 0.2uA 2M x 8bit/1M x 16bit CMOS 3.0V-only boot sector flash memorydistributorSOP320°C70°C433 K
A29L160TM-7070ns; active read:9mA; programm/erase:20mA 0.2uA 2M x 8bit/1M x 16bit CMOS 3.0V-only boot sector flash memorydistributorSOP320°C70°C433 K
A29L160TM-9090ns; active read:9mA; programm/erase:20mA 0.2uA 2M x 8bit/1M x 16bit CMOS 3.0V-only boot sector flash memorydistributorSOP320°C70°C433 K
A29L160TV-120120ns; active read:9mA; programm/erase:20mA 0.2uA 2M x 8bit/1M x 16bit CMOS 3.0V-only boot sector flash memorydistributorTSOP320°C70°C433 K
RL1601CSGlass passivated silicon rectifier. Max recurrent peak reverse voltage 50V, max RMS voltage 35V, max DC blocking voltage 50V. Max average forward rectified current 16.0A at Tc=100degC.distributorD2PAK3-65°C150°C23 K
RL1602CSGlass passivated silicon rectifier. Max recurrent peak reverse voltage 100V, max RMS voltage 70V, max DC blocking voltage 100V. Max average forward rectified current 16.0A at Tc=100degC.distributorD2PAK3-65°C150°C23 K
RL1603CSGlass passivated silicon rectifier. Max recurrent peak reverse voltage 200V, max RMS voltage 140V, max DC blocking voltage 200V. Max average forward rectified current 16.0A at Tc=100degC.distributorD2PAK3-65°C150°C23 K
RL1604CSGlass passivated silicon rectifier. Max recurrent peak reverse voltage 400V, max RMS voltage 280V, max DC blocking voltage 400V. Max average forward rectified current 16.0A at Tc=100degC.distributorD2PAK3-65°C150°C23 K
RL1605CSGlass passivated silicon rectifier. Max recurrent peak reverse voltage 600V, max RMS voltage 420V, max DC blocking voltage 600V. Max average forward rectified current 16.0A at Tc=100degC.distributorD2PAK3-65°C150°C23 K
RL1606CSGlass passivated silicon rectifier. Max recurrent peak reverse voltage 800V, max RMS voltage 560V, max DC blocking voltage 800V. Max average forward rectified current 16.0A at Tc=100degC.distributorD2PAK3-65°C150°C23 K
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