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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
IRF5M5210HEXFET power MOSFET thru-hole. BVDSS = -100V, RDS(on) = 0.07 Ohm, ID = -34AInternational-Rectifier-3-55°C150°C113 K
ZMM52253.0 V, 20 mA, Silicon planar zener diodedistributor-2--34 K
ZMM52263.3 V, 20 mA, Silicon planar zener diodedistributor-2--34 K
ZMM52273.6 V, 20 mA, Silicon planar zener diodedistributor-2--34 K
ZMM52283.9 V, 20 mA, Silicon planar zener diodedistributor-2--34 K
ZMM52294.3 V, 20 mA, Silicon planar zener diodedistributor-2--34 K
ZMM52304.7 V, 20 mA, Silicon planar zener diodedistributor-2--34 K
ZMM5255B5% zener diode. Power dissipation 500 mW. Zener voltage Vz=28V at Izt=4.5mA.distributor---65°C200°C23 K
ZMM5256B5% zener diode. Power dissipation 500 mW. Zener voltage Vz=30V at Izt=4.2mA.distributor---65°C200°C23 K
ZMM5257B5% zener diode. Power dissipation 500 mW. Zener voltage Vz=33V at Izt=3.8mA.distributor---65°C200°C23 K
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