| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| MA3X717D | Silicon epitaxial planer type Schottky barrier diode | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 47 K |
| MA3X717E | Silicon epitaxial planer type Schottky barrier diode | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 47 K |
| MA3X721 | Silicon epitaxial planer type Schottky barrier diode | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 45 K |
| MA3X721D | Silicon epitaxial planer type Schottky barrier diode | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 47 K |
| MA3X721E | Silicon epitaxial planer type Schottky barrier diode | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 47 K |
| MA3X727 | Silicon epitaxial planer type Schottky barrier diode | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 46 K |
| MA3X730 | Silicon epitaxial planer type Schottky barrier diode | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 40 K |
| MA3X740 | Silicon epitaxial planer type Schottky barrier diode | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 46 K |
| MA3X748 | Silicon epitaxial planer type Schottky barrier diode | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 47 K |
| MA3X786 | Silicon epitaxial planer type Schottky barrier diode | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 46 K |
| [1] [2] [3] 4 [5] |
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