Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
---|
CM30MD-12H | 30A IGBT module for medium power switching use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 21 | -40°C | 150°C | 143 K |
CM50MD-12H | 50A IGBT module for medium power switching use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 21 | -40°C | 150°C | 149 K |
MH16S64BAMD-10 | 1,073,741,824-bit (16,777,216-word by 64-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | 0°C | 70°C | 591 K |
MH16S72BAMD-10 | 1,207,959,552-bit (16,777,216-word by 64-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | 0°C | 70°C | 592 K |
MH16S72BAMD-10 | 1207959552-bit (16777216-word by 72-bit) synchronous dynamic RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 168 | 0°C | 70°C | 592 K |
MH4S64CBMD-10 | 268435456 (4194304- word by 64-bit) dynamic RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 168 | 0°C | 70°C | 708 K |
MH4S64CBMD-12 | 268435456 (4194304- word by 64-bit) dynamic RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 168 | 0°C | 70°C | 708 K |
MH4S64CBMD-12B | 268435456 (4194304- word by 64-bit) dynamic RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 168 | 0°C | 70°C | 708 K |
MH4S64CBMD-15 | 268435456 (4194304- word by 64-bit) dynamic RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 168 | 0°C | 70°C | 708 K |
MH4S64CBMD-15B | 268435456 (4194304- word by 64-bit) dynamic RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 168 | 0°C | 70°C | 708 K |
[1] 2 [3] [4] |
---|