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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
MRF3010RF power field effect transistorMotorola-3--106 K
MRF31040.5 W, 1550-1650 MHz,microwave linear power transistorM-A-COM---manufacturer-of-RF-4--93 K
MRF31050.8 W, 1550-1650 MHz,microwave linear power transistorM-A-COM---manufacturer-of-RF-4--93 K
MRF31061.6 W, 1550-1650 MHz,microwave linear power transistorM-A-COM---manufacturer-of-RF-4--93 K
MRF3131 W, 400 MHz, high-frequency transistor NPN siliconM-A-COM---manufacturer-of-RF-4--84 K
MRF31430 W, 30-200 MHz, RF power transistor NPN siliconM-A-COM---manufacturer-of-RF-4--200 K
MRF31680 W, 3-200 MHz, RF power transistor NPN siliconM-A-COM---manufacturer-of-RF-4--159 K
MRF317100 W, 30-200 MHz, RF power transistor NPN siliconM-A-COM---manufacturer-of-RF-4--144 K
MRF32110 W, 400 MHz, RF power transistor NPN siliconM-A-COM---manufacturer-of-RF-4--184 K
MRF32320 W, 400 MHz, RF power transistor NPN siliconM-A-COM---manufacturer-of-RF-4--184 K
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