| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| MTB15N06E | TMOS E-FET high energy power FET | Motorola | DPAK | 4 | -55°C | 150°C | 231 K |
| MTB36N06E | TMOS E-FET high energy power FET D2PAK for surface mount | Motorola | DPAK | 4 | -55°C | 150°C | 278 K |
| MTB50N06EL | TMOS E-FET power field effect transistor D2PAK for surface mount | Motorola | DPAK | 4 | -55°C | 150°C | 97 K |
| MTD8N06E | TMOS E-FET power field effect transistor D2PAK for surface mount | Motorola | DPAK | 4 | -55°C | 150°C | 185 K |
| MTP50N06EL | TMOS E-FET power field effect transistor | Motorola | - | 4 | -55°C | 150°C | 232 K |
| MTP8N06E | TMOS E-FET power field effect transistor | Motorola | - | 4 | -55°C | 150°C | 212 K |
| PHB36N06E | 60 V, power MOS transistor | Philips-Semiconductors | SOT | 3 | - | - | 55 K |
| PHB36N06E | 60 V, power MOS transistor | Philips-Semiconductors | SOT | 3 | - | - | 55 K |
| PHP15N06E | 60 V, power MOS transistor | Philips-Semiconductors | TO | 3 | - | - | 54 K |
| PHP36N06E | 60 V, power MOS transistor | Philips-Semiconductors | TO | 3 | - | - | 51 K |
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