| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| HGTG20N100D2 | 20A, 1000V N-Channel IGBT | Intersil-Corporation | - | - | - | - | 36 K |
| RF1S4N100SM | 4.3A, 1000V, 3.500 Ohm, High Voltage, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 45 K |
| RF1S4N100SM | 4.3A, 1000V, 3.500 Ohm, High Voltage, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 45 K |
| RFP4N100 | 4.3A, 1000V, 3.500 Ohm, High Voltage, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 45 K |
| STH6N100 | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 202 K |
| STH6N100FI | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 202 K |
| STP3N100 | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 197 K |
| STP3N100FI | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 197 K |
| STP4N100 | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 202 K |
| STP4N100FI | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 202 K |
| 1 [2] [3] [4] [5] [6] [7] [8] [9] [10] |
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