| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IXFE23N100 | 1000V HiPerFET power MOSFET | distributor | ISOPLUS227 | 4 | -55°C | 150°C | 653 K |
| IXFE24N100 | 1000V HiPerFET power MOSFET | distributor | ISOPLUS227 | 4 | -55°C | 150°C | 653 K |
| IXFE34N100 | 1000V HiPerFET power MOSFET | distributor | ISOPLUS227 | 4 | -55°C | 150°C | 653 K |
| IXFE36N100 | 1000V HiPerFET power MOSFET | distributor | ISOPLUS227 | 4 | -55°C | 150°C | 653 K |
| IXFF24N100 | 1000V HiPerFET power MOSFET | distributor | - | 5 | -55°C | 150°C | 72 K |
| IXRH50N100 | 1000V IGBT with reverse blocking capability | distributor | - | 3 | -55°C | 150°C | 43 K |
| IXRH50N100 | 1000V IGBT with reverse blocking capability | distributor | - | 3 | -55°C | 150°C | 43 K |
| IXTH1N100 | 1000V high voltage MOSFET | distributor | - | 3 | -55°C | 150°C | 73 K |
| IXTT1N100 | 1000V high voltage MOSFET | distributor | - | 3 | -55°C | 150°C | 73 K |
| UN100 | NPN, high power transistor. For high power audio and linear applications. Power switching circuits such as relay or solenoid drivers, DC to DC converters or inverters. Vceo = 100Vdc, Vcer = 100Vdc, Vcb = 200Vdc, Veb = 7Vcd, Ic = 15Adc, PD = 150W. | distributor | - | 3 | -65°C | 200°C | 47 K |
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