Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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1N100A | Germanium Diode | Microsemi-Corporation | - | - | - | - | 62 K |
HGTG34N100E2 | 34A, 1000V N-Channel IGBT | Intersil-Corporation | - | - | - | - | 38 K |
NM27C020N100 | 2 Meg (256k x 8) UV Erasable CMOS EPROM [Life-time buy] | Fairchild-Semiconductor | MDIP | 32 | - | - | 119 K |
NM27C020N100 | 2 Meg (256k x 8) UV Erasable CMOS EPROM [Life-time buy] | Fairchild-Semiconductor | MDIP | 32 | - | - | 119 K |
NM27C040N100 | 4,194,304 Bit (512K x 8) High Performance CMOS EPROM | Fairchild-Semiconductor | MDIP | 32 | - | - | 111 K |
NM27C240N100 | 4 Meg (256K x 16) High Performance CMOS EPROM [Life-time buy] | Fairchild-Semiconductor | MDIP | 40 | - | - | 96 K |
NM27C256N100 | 256K-Bit (32K x 8) High Performance CMOS EPROM | Fairchild-Semiconductor | MDIP | 28 | - | - | 110 K |
NM27C256N100 | 256K-Bit (32K x 8) High Performance CMOS EPROM | Fairchild-Semiconductor | MDIP | 28 | - | - | 110 K |
PN100 | NPN General Purpose Amplifier | Fairchild-Semiconductor | - | 3 | - | - | 44 K |
PN100A | NPN General Purpose Amplifier | Fairchild-Semiconductor | - | 3 | - | - | 44 K |
[1] 2 [3] [4] [5] [6] [7] [8] [9] [10] |
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