| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| MTB1N100E | TMOS E-FET high energy power FET | Motorola | DPAK | 4 | -55°C | 150°C | 256 K |
| MTB3N100E | TMOS E-FET high energy power FET D2PAK for surface mount | Motorola | DPAK | 4 | -55°C | 150°C | 262 K |
| MTP1N100E | TMOS E-FET power field effect transistor | Motorola | - | 4 | -55°C | 150°C | 203 K |
| MTP3N100E | TMOS E-FET power field effect transistor | Motorola | - | 4 | -55°C | 150°C | 206 K |
| PRN10016N1000J | Isolated resistor termination network | California-Micro-Devices | SOIC | 16 | -55°C | 125°C | 126 K |
| PRN10016N10R0J | Isolated resistor termination network | California-Micro-Devices | SOIC | 16 | -55°C | 125°C | 126 K |
| PRN10016N22R0J | Isolated resistor termination network | California-Micro-Devices | SOIC | 16 | -55°C | 125°C | 126 K |
| PRN10016N33R0J | Isolated resistor termination network | California-Micro-Devices | SOIC | 16 | -55°C | 125°C | 126 K |
| PRN10016N39R0J | Isolated resistor termination network | California-Micro-Devices | SOIC | 16 | -55°C | 125°C | 126 K |
| [1] [2] [3] 4 [5] [6] [7] [8] [9] [10] |
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