| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| MMFT1N10E | Medium power field effect transistor | Motorola | - | 4 | -65°C | 150°C | 236 K |
| MTP40N10E | TMOS E-FET power field effect transistor | Motorola | - | 4 | -55°C | 150°C | 160 K |
| MTW33N10E | TMOS E-FET power field effect transistor TO-247 with isolated mounting hole | Motorola | - | 4 | -55°C | 150°C | 227 K |
| MTW45N10E | TMOS E-FET power field effect transistor TO-247 with isolated mounting hole | Motorola | - | 4 | -55°C | 150°C | 155 K |
| MTY100N10E | TMOS E-FET power field effect transistor | Motorola | - | 3 | -55°C | 150°C | 216 K |
| PHD10N10E | PowerMOS transistor | Philips-Semiconductors | SOT428 | - | - | - | 76 K |
| PHD12N10E | PowerMOS transistor | Philips-Semiconductors | SOT428 | - | - | - | 79 K |
| PHD6N10E | PowerMOS transistor | Philips-Semiconductors | SOT428 | - | - | - | 70 K |
| PHP12N10E | PowerMOS transistor | Philips-Semiconductors | SOT78 | - | - | - | 72 K |
| PHP26N10E | PowerMOS transistor | Philips-Semiconductors | SOT78 | - | - | - | 71 K |
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