| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 1N5550 | 200 V rectifier 5.0 A forward current, 2000 ns recovery time | distributor | - | 2 | -65°C | 175°C | 101 K |
| 1N5551 | 400 V rectifier 5.0 A forward current, 2000 ns recovery time | distributor | - | 2 | -65°C | 175°C | 101 K |
| 1N5552 | 600 V rectifier 5.0 A forward current, 2000 ns recovery time | distributor | - | 2 | -65°C | 175°C | 101 K |
| 1N5553 | 800 V rectifier 5.0 A forward current, 2000 ns recovery time | distributor | - | 2 | -65°C | 175°C | 101 K |
| 1N5554 | 1000 V rectifier 5.0 A forward current, 2000 ns recovery time | distributor | - | 2 | -65°C | 175°C | 101 K |
| 2N5550 | 1W NPN complementary silicon general purpose high voltage transistor | distributor | - | 3 | -55°C | 150°C | 165 K |
| 2N5551 | 1W NPN complementary silicon general purpose high voltage transistor | distributor | - | 3 | -55°C | 150°C | 165 K |
| IFN5566 | N-Channel dual silicon junction field-effect transistor | distributor | - | 8 | - | - | 95 K |
| IXSN55N120A | 1200V high voltage IGBT | distributor | - | 5 | -55°C | 150°C | 71 K |
| OM11N55SA | 550V, 11 Amp, N-channel MOSFET | distributor | - | 3 | -55°C | 150°C | 29 K |
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